Power MOSFETs specially designed for space power systems are expected to\nsimultaneously meet the requirements of electrical performance and radiation hardness. Radiationhardened\n(rad-hard) power MOSFET design can be achieved via cell structure optimization. This\npaper conducts an investigation of the cell geometrical parameters with major impacts on radiation\nhardness, and a rad-hard power MOSFET is designed and fabricated. The experimental results\nvalidate the devicesâ?? total ionizing dose (TID) and single event effects (SEE) hardness to suitably\nsatisfy most space power system requirements while maintaining acceptable electrical performance.
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